savantic semiconductor product specification silicon npn power transistors 2SC2751 d escription with to-3n package high voltage ,high speed applications for use in high voltage ,high speed and power switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i cm collector current-peak 30 a i b base current 7.5 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SC2751 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =10a ;i b =2a; l=50h 400 v v cesat collector-emitter saturation voltage i c =10a ;i b =2a 1.0 v v besat base-emitter saturation voltage i c =10a ;i b =2a 1.5 v i cbo collector cut-off current v cb =400v; i e =0 100 a i cex collector cut-off current v ce =400v; v be(off) =-1.5v t a =125 100 1.0 a ma i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =2a ; v ce =5v 15 80 h fe-2 dc current gain i c =5a ; v ce =5v 10 h fe-3 dc current gain i c =10a ; v ce =5v 7 switching times t on turn-on time 1.0 s t s storage time 2.5 s t f fall time i c =10a;i b1 =-i b2 =2a r l =15 @ ; v cc a 150v 0.7 s h fe-1 classifications n r o y 15-30 20-40 30-60 40-80 downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SC2751 package outline fig.2 outline dimensions (unindicated tolerance:0.10mm) downloaded from: http:///
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